NC State University
CLAWS III-N Power Integration Engineer
NC State University, Raleigh, North Carolina, United States, 27601
We are seeking a highly skilled Wide-Bandgap Power Device Engineer to join our team and contribute to the development of next-generation power semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, power device design (diodes, FETs, etc.), electrical characterization, and device simulation to drive innovation in high-efficiency, high-performance wide-bandgap power solutions.
Key Responsibilities:
Power Device Design & Development (30%)
Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications. Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement. Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.
Process Integration & Fabrication (30%)
Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications. Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps. Troubleshoot process integration challenges related to defectivity, yield, and reliability.
Electrical Characterization & Reliability Testing (20%)
Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance). Analyze reliability metrics such as TDDB, HTRB, HTOL, and step-stress testing to assess long-term device stability. Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.
Cross-functional Collaboration (20%)
Work with process engineers and R&D partners to drive technology improvements. Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages. Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.
Other Responsibilities: The successful candidate will:
Comply with stated workplace policies. Communicate results, plans, and other updates to a variety of audiences. Adhere to and mentor others in known best practices. Support CLAWS activities such as tours, meetings, and conferences.
Minimum Education and Experience: Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices. 3+ years of experience in GaN power device design and process integration (industry or research). Other Required Qualifications: A track record of publications in high-quality journals and/or conferences. Experience characterizing high-power semiconductor devices and extracting relevant device parameters. Excellent communication and interpersonal skills. Ability to multitask and meet deadlines with moderate supervision. Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders. Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds. Strong background in semiconductor physics, TCAD simulation, and electrical characterization. Hands-on experience with semiconductor process integration, fabrication, and failure analysis. Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges. Eligibility to obtain clearance upon request of the US government. Preferred Qualifications: TCAD device modeling. Additional characterization of materials and devices, including failure analysis, defect inspection, radiation effects, and high-k dielectrics. Fabrication of semiconductor devices for high-power applications. Lithography mask layout. MES and SPC systems. Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab) Power electronics applications (high-voltage converters, automotive, RF, or data centers). Packaging constraints and thermal management for GaN devices. NC State University is an equal opportunity employer. All qualified applicants will receive equal opportunities for employment without regard to age, color, disability, gender identity, genetic information, national origin, race, religion, sex (including pregnancy), sexual orientation, and veteran status.
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Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications. Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement. Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.
Process Integration & Fabrication (30%)
Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications. Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps. Troubleshoot process integration challenges related to defectivity, yield, and reliability.
Electrical Characterization & Reliability Testing (20%)
Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance). Analyze reliability metrics such as TDDB, HTRB, HTOL, and step-stress testing to assess long-term device stability. Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.
Cross-functional Collaboration (20%)
Work with process engineers and R&D partners to drive technology improvements. Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages. Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.
Other Responsibilities: The successful candidate will:
Comply with stated workplace policies. Communicate results, plans, and other updates to a variety of audiences. Adhere to and mentor others in known best practices. Support CLAWS activities such as tours, meetings, and conferences.
Minimum Education and Experience: Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices. 3+ years of experience in GaN power device design and process integration (industry or research). Other Required Qualifications: A track record of publications in high-quality journals and/or conferences. Experience characterizing high-power semiconductor devices and extracting relevant device parameters. Excellent communication and interpersonal skills. Ability to multitask and meet deadlines with moderate supervision. Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders. Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds. Strong background in semiconductor physics, TCAD simulation, and electrical characterization. Hands-on experience with semiconductor process integration, fabrication, and failure analysis. Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges. Eligibility to obtain clearance upon request of the US government. Preferred Qualifications: TCAD device modeling. Additional characterization of materials and devices, including failure analysis, defect inspection, radiation effects, and high-k dielectrics. Fabrication of semiconductor devices for high-power applications. Lithography mask layout. MES and SPC systems. Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab) Power electronics applications (high-voltage converters, automotive, RF, or data centers). Packaging constraints and thermal management for GaN devices. NC State University is an equal opportunity employer. All qualified applicants will receive equal opportunities for employment without regard to age, color, disability, gender identity, genetic information, national origin, race, religion, sex (including pregnancy), sexual orientation, and veteran status.
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