MRDI
Hong Kong Microelectronics Research and Development Institute (MRDI) is established to seize the huge potential market for third-generation semiconductors and align with the national strategy for technological development.
The vision is for the MRDI to play a leading role in strengthening collaboration with the industry, academia, and research sectors, expediting the "1 to N" transformation of scientific research outcomes, promoting technological innovation, and assisting the industry in enhancing efficiency as well as achieving upgrading and transformation.
MRDI is looking for a
high-calibre and passionate Device Engineer (GaN Devices)
with strong academic and research background to join our dynamic R&D team. The successful candidate will focus on device R&D, including simulation, fabrication collaboration, characterization, and proposal writing, to drive the institute’s technology development in GaN power and RF devices. JOB RESPONSIBILITIES
Conduct advanced R&D on GaN power and RF devices, including device design, simulation, and characterization. Collaborate with foundries, universities, and research institutes to carry out device fabrication and testing. Perform in-depth data analysis of electrical and reliability measurements to support device optimization. Contribute to the preparation of technical proposals, research grant applications, and project reports. Keep abreast of the latest developments in GaN device technology and identify opportunities for innovation. Support MRDI’s mission to transfer R&D results into impactful industrial applications. Provide technical guidance to junior researchers and assist in building internal know-how and infrastructure for GaN device R&D. REQUIREMENTS
PhD degree in Electrical Engineering, Applied Physics, Materials Science, or related disciplines, with specialization in semiconductor devices. Solid research experience in GaN or wide-bandgap semiconductor devices, covering device physics, simulation, fabrication, and/or characterization. Strong publication record or equivalent R&D achievements in the area of GaN devices. Experience in proposal writing, grant applications, or collaborative R&D projects is highly desirable. Familiarity with technology transfer, IP generation, or collaboration with industry is a plus. Highly motivated, independent, and detail-oriented, with strong problem-solving and analytical skills. Excellent communication and presentation skills in English; proficiency in Chinese (Putonghua and/or Cantonese) is an advantage. The initial employment contract spans 12 months, with renewal subject to performance and funding availability. The incumbent will normally work five days a week. Salary will be commensurate with qualifications and experience. A gratuity of 15% of the salary will be awarded upon satisfactory completion of the contract. MRDI is an Equal Opportunities Employer and welcomes applications from all qualified candidates.
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high-calibre and passionate Device Engineer (GaN Devices)
with strong academic and research background to join our dynamic R&D team. The successful candidate will focus on device R&D, including simulation, fabrication collaboration, characterization, and proposal writing, to drive the institute’s technology development in GaN power and RF devices. JOB RESPONSIBILITIES
Conduct advanced R&D on GaN power and RF devices, including device design, simulation, and characterization. Collaborate with foundries, universities, and research institutes to carry out device fabrication and testing. Perform in-depth data analysis of electrical and reliability measurements to support device optimization. Contribute to the preparation of technical proposals, research grant applications, and project reports. Keep abreast of the latest developments in GaN device technology and identify opportunities for innovation. Support MRDI’s mission to transfer R&D results into impactful industrial applications. Provide technical guidance to junior researchers and assist in building internal know-how and infrastructure for GaN device R&D. REQUIREMENTS
PhD degree in Electrical Engineering, Applied Physics, Materials Science, or related disciplines, with specialization in semiconductor devices. Solid research experience in GaN or wide-bandgap semiconductor devices, covering device physics, simulation, fabrication, and/or characterization. Strong publication record or equivalent R&D achievements in the area of GaN devices. Experience in proposal writing, grant applications, or collaborative R&D projects is highly desirable. Familiarity with technology transfer, IP generation, or collaboration with industry is a plus. Highly motivated, independent, and detail-oriented, with strong problem-solving and analytical skills. Excellent communication and presentation skills in English; proficiency in Chinese (Putonghua and/or Cantonese) is an advantage. The initial employment contract spans 12 months, with renewal subject to performance and funding availability. The incumbent will normally work five days a week. Salary will be commensurate with qualifications and experience. A gratuity of 15% of the salary will be awarded upon satisfactory completion of the contract. MRDI is an Equal Opportunities Employer and welcomes applications from all qualified candidates.
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