Senior RF Power Amplifier Design Engineer - GaAs HBT

A leading technology company is seeking an experienced RF Power Amplifier Design Engineer located in San Jose, California. The ideal candidate will have over 8 years of experience in designing RF power amplifiers, with hands-on skills in GaAs HBT technology. This position offers a salary range of $120,000 - $192,000, along with a comprehensive benefits package including 401(K) matching and paid leave. #J-18808-Ljbffr