Senior GaN RF Modeling Engineer - High-Power HEMT Expert

A leading semiconductor company located in Richardson, Texas, is looking for a Sr Principal Modeling Engineer. This role involves the analysis and development of models for GaN HEMTs, requiring deep understanding of GaN device physics and over 15 years of experience in the field. Candidates will work collaboratively across teams to ensure high performance in next-generation wireless communication systems. Ideal applicants are proficient with RF characterization tools and have strong programming skills. #J-18808-Ljbffr