Hybrid GaN Device Design & Integration Engineer

A global semiconductor company in California is looking for a Device Design and Integration Engineer to design and implement advanced high-voltage GaN products. Candidates should have a Master’s degree or PhD in Electrical Engineering with comprehensive experience in GaN device physics. The expected annual salary ranges from $115K to $140K, with opportunities for bonuses and a hybrid work environment, promoting collaboration and innovation. #J-18808-Ljbffr