Principal GaN Power Device Engineer — R&D Leader

A leading semiconductor company in Somerville, MA, is seeking a Principal Semiconductor Device Engineer to lead the development of GaN power devices. This role requires 15–25 years of experience in semiconductor R&D, technical leadership across device architecture, and collaboration with cross-functional teams. The ideal candidate will have a PhD in a relevant field and hands-on experience in power device design. This position offers a competitive salary and a comprehensive benefits package, including stock options. #J-18808-Ljbffr