GaN RF Process Integration Engineer – Advanced Device R&D

A leading semiconductor company in Burlington, VT is seeking experienced engineers to develop high performing Gallium Nitride device technologies for RF applications. The successful candidate will have at least 8 years of industry experience and a Bachelor's degree in electrical engineering or a relevant field, with a strong preference for those with a Master's or Ph.D. Responsibilities include driving innovative technology development while ensuring adherence to all safety and environmental protocols. This is an on-site role with relocation required to Essex Junction, VT. #J-18808-Ljbffr