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Northrop Grumman (Corporate)

Photolithography Engineer/Principal Photolithography Engineer 2nd Shift

Northrop Grumman (Corporate), Linthicum Heights, Maryland, United States, 21090

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Photolithography Engineer Opportunity

Northrop Grumman Microelectronics Center (NGMC) within Northrop Grumman Mission Systems is seeking an exceptionally talented, motivated, and creative Photolithography Engineer for our Advanced Technology Lab (ATL) located outside of Baltimore, Maryland. This role involves designing, manufacturing, and testing semiconductor products for internal and commercial production customers as well as emerging technology programs. Northrop Grumman's ATL semiconductor foundry provides unique capabilities supporting a range of production microelectronic devices and leading edge technology development in superconducting electronics. Our devices enable multiple generations of Northrop Grumman's ground-based radars, avionic radars, and space systems. Join us for the opportunity to work with an amazing, experienced, and talented team while helping to serve your country. Enjoy the chance to grow and learn through a variety of challenging projects in R&D, ongoing long-term programs, and new programs targeting future military platforms. Our multidisciplinary foundry team enables activities spanning from development to sustainment process engineering. ATL is responsible for all aspects of semiconductor technology including design, mask making, wafer fabrication, test, and assembly. Candidates must be strong team participants, have excellent communication skills, and be resourceful as well as multi-disciplinary. A strong understanding of semiconductor technology, direct process development experience, and production background is essential. The Photolithography Engineer must possess knowledge of lithography principles and practices, should be experienced with I-Line and DUV spin coating systems, photo-resin chemistry, developer chemistry, anti-reflective coatings, liftoff processes, image reversal, and thin-film strip and rework procedures. The engineer should also be familiar with a wide variety of metrology tools including CDSEM and overlay measurement. The selected candidate should be hands on, have an aptitude for technology development, and demonstrate an ability to communicate well with others as well as experience in coat defect resolution, film-thickness optimization, root-cause-analysis, and design of experiments. The Photolithography Engineer will be responsible for: Equipment acceptance and qualification, technician training and certification, and process safety. Supporting the superconducting line including assisting with process configuration and improvement. Interfacing with other unit process engineers and product integration engineers to develop processes to support new products. Writing and maintaining process documentation. Supporting statistical process control (SPC) and continuous improvement efforts. Must be able to work 2nd shift 2-11pm. This requisition may be filled as a Photolithography Engineer or Principal Photolithography Engineer. Basic Qualifications for Photolithography Engineer: Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 2 years relevant industry experience (0 years with a Masters). Hands-on knowledge and operation of lithography steppers, spin coat tracks, developers, CDSEM, and overlay tools. Experience with semiconductor fabrication. Must be able to work 2nd shift 2-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Basic Qualifications for a Principal Photolithography Engineer: Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 5 years of relevant experience, 3 years with a Masters or 0 years with PHD. Hands-on knowledge and operation of lithography steppers, spin coat tracks, developers, CDSEM, and overlay tools. Experience with semiconductor fabrication. Must be able to work 2nd shift 2-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Preferred Qualifications: Experience working in a compound and Si semiconductor fab as a photolithography engineer. Strong understanding of semiconductor technology and photolithography principles. Experience with DUV and I-line scanners/steppers. Experience with coat/develop tracks including C&D P8000, SVG 86xx/88xx, SVG 90S, TEL Mark V, and TEL ACT8 tracks. Knowledge of resist chemistry and general resist processing, including liftoff and image reversal processes. Data analysis and visualization (JMP and/or MiniTab). Advanced knowledge of statistical process control (SPC). Experience in structured problem-solving methodology to troubleshoot tool and process issues. Ability to work with minimal supervision. Excellent project leadership skills with demonstrated ability to identify manufacturing improvements, manage change, and implement solutions. Ability and desire to assume a technical leadership role within the organization. Salary Range: $85,400.00 - $128,000.00 Salary Range 2: $105,400.00 - $158,000.00 The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills, and current market conditions. The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates. Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class.