Lead RF GaN Devices Engineer for High-Frequency Power

A leading technology company in California is seeking an experienced individual to join their RF Devices team, focusing on the development of GaN-based semiconductor devices. Ideal candidates will have a PhD in electrical engineering and at least 5 years of post-graduate experience. Responsibilities include designing new structures, engaging with customers, and leading device research efforts. The competitive salary ranges from $154,500 to $197,900, excluding bonuses and benefits. #J-18808-Ljbffr