GaN MOCVD Epitaxy Lead - Remote 2 Days/Week

A leading semiconductor company based in California is seeking a Senior Staff MOCVD Development Engineer to lead the development of processes for GaN-based power devices. The role involves deep technical knowledge in MOCVD reactor behavior and epitaxial growth on silicon and sapphire substrates. Candidates must possess a Ph.D. in a relevant field, with a minimum of 8 years of hands-on experience, and demonstrate a successful track record in materials development and optimization. This position offers competitive compensation and the opportunity to work in a flexible environment. #J-18808-Ljbffr