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Staff Foundry Technology Reliability Engineer – HBM | Micron Technology | Folsom
NanoHelp, Folsom, California, United States, 95630
Staff Foundry Technology Reliability Engineer – HBM | Micron Technology | Folsom
Micron Technology’s Heterogeneous Integration Group (HIG) is leading the development of
High Bandwidth Memory (HBM)
for AI and ML applications — a breakthrough in semiconductor miniaturization. Leveraging
Through Silicon Via (TSV)
technology, the team stacks DRAM dies and logic in a single package, achieving unmatched memory density and speed. This role focuses on
nano-enabled reliability engineering
to push the limits of advanced
FinFET
and
TSV-based architectures . Lead reliability engineering for cutting-edge
HBM products
at Micron Technology, Folsom. Collaborate across design, foundry, and R&D teams to assess, model, and optimize nanotechnology-enabled process reliability for
FinFET nodes
and
TSV interconnects . Responsibilities: Define, assess, and optimize reliability specifications for advanced
FinFET-based base dies
and TSV interconnect structures. Perform
TMI_Aging simulations
for both digital and custom flows, evaluate degradation due to
BTI, HCI, SHE, TDDB , and set
electromigration limits
for TSV chains. Requirements: BS in EE/CS or related + 3+ years relevant experience Foundry PDKs, CMOS design, EDA tools, reliability simulations Micron’s HIG team is pushing the frontiers of
heterogeneous integration , delivering high-performance
High Bandwidth Memory (HBM)
solutions for AI/ML workloads that demand extreme memory bandwidth. This is not just incremental semiconductor work — it’s deep
nanotechnology-enabled packaging , using
TSV
to vertically integrate multiple dies for minimal latency and maximum throughput. What We Offer: Competitive salary + bonus + stock options Salary range: $114,000 – $280,000 USD Micron is an equal opportunities employer and welcomes applications from all qualified candidates. We are committed to a diverse and inclusive workplace.
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Micron Technology’s Heterogeneous Integration Group (HIG) is leading the development of
High Bandwidth Memory (HBM)
for AI and ML applications — a breakthrough in semiconductor miniaturization. Leveraging
Through Silicon Via (TSV)
technology, the team stacks DRAM dies and logic in a single package, achieving unmatched memory density and speed. This role focuses on
nano-enabled reliability engineering
to push the limits of advanced
FinFET
and
TSV-based architectures . Lead reliability engineering for cutting-edge
HBM products
at Micron Technology, Folsom. Collaborate across design, foundry, and R&D teams to assess, model, and optimize nanotechnology-enabled process reliability for
FinFET nodes
and
TSV interconnects . Responsibilities: Define, assess, and optimize reliability specifications for advanced
FinFET-based base dies
and TSV interconnect structures. Perform
TMI_Aging simulations
for both digital and custom flows, evaluate degradation due to
BTI, HCI, SHE, TDDB , and set
electromigration limits
for TSV chains. Requirements: BS in EE/CS or related + 3+ years relevant experience Foundry PDKs, CMOS design, EDA tools, reliability simulations Micron’s HIG team is pushing the frontiers of
heterogeneous integration , delivering high-performance
High Bandwidth Memory (HBM)
solutions for AI/ML workloads that demand extreme memory bandwidth. This is not just incremental semiconductor work — it’s deep
nanotechnology-enabled packaging , using
TSV
to vertically integrate multiple dies for minimal latency and maximum throughput. What We Offer: Competitive salary + bonus + stock options Salary range: $114,000 – $280,000 USD Micron is an equal opportunities employer and welcomes applications from all qualified candidates. We are committed to a diverse and inclusive workplace.
#J-18808-Ljbffr