Texas Instruments
Wide Bandgap Process Development Engineer
Texas Instruments, Dallas, Texas, United States, 75215
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TI is seeking an innovative and highly skilled device physics and process engineer to join our cutting‑edge central research group in Kilby Labs. This role offers the unique opportunity to work at the forefront of developing new process technology in wide‑bandgap and other materials to redefine the power electronics landscape. You will be instrumental in developing and scaling power process technologies, including GaN epitaxial development and innovations. You’ll collaborate across disciplines to deliver state‑of‑the‑art devices with world‑class performance and reliability.
About the job This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's central research labs, Kilby Labs, the role involves close collaboration with fab/manufacturing, business units, and the Advanced Technology Development (ATD) group. This position requires in-depth knowledge of III‑nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:
GaN device simulations (TCAD), device design, layout, lead tape‑outs
Novel Epitaxial development: contributing innovative ideas for unlocking and enabling future wide‑bandgap capabilities for TI, but also hands on driving EPI reactors for running experiments to validate your ideas.
Develop robust process flows, drive design‑of‑experiment (DOE) execution, and solve complex integration challenges
Collaboration with fab/manufacturing engineers to ensure device manufacturability
Collaboration with reliability engineers to meet device reliability requirements
Failure root‑cause investigation for device/process/reliability/yield improvement
The ideal candidate is expected to have a strong understanding of the following:
Power FETs and other relevant semiconductor device physics
Innovative and creative background on epitaxial development
Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
Electrical and materials characterization methodologies and statistical data analysis
Strong hands‑on lab experience and excellent problem solving skills are also needed
Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams
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TI is seeking an innovative and highly skilled device physics and process engineer to join our cutting‑edge central research group in Kilby Labs. This role offers the unique opportunity to work at the forefront of developing new process technology in wide‑bandgap and other materials to redefine the power electronics landscape. You will be instrumental in developing and scaling power process technologies, including GaN epitaxial development and innovations. You’ll collaborate across disciplines to deliver state‑of‑the‑art devices with world‑class performance and reliability.
About the job This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's central research labs, Kilby Labs, the role involves close collaboration with fab/manufacturing, business units, and the Advanced Technology Development (ATD) group. This position requires in-depth knowledge of III‑nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:
GaN device simulations (TCAD), device design, layout, lead tape‑outs
Novel Epitaxial development: contributing innovative ideas for unlocking and enabling future wide‑bandgap capabilities for TI, but also hands on driving EPI reactors for running experiments to validate your ideas.
Develop robust process flows, drive design‑of‑experiment (DOE) execution, and solve complex integration challenges
Collaboration with fab/manufacturing engineers to ensure device manufacturability
Collaboration with reliability engineers to meet device reliability requirements
Failure root‑cause investigation for device/process/reliability/yield improvement
The ideal candidate is expected to have a strong understanding of the following:
Power FETs and other relevant semiconductor device physics
Innovative and creative background on epitaxial development
Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
Electrical and materials characterization methodologies and statistical data analysis
Strong hands‑on lab experience and excellent problem solving skills are also needed
Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams
#J-18808-Ljbffr