Texas Instruments
Wide Bandgap Process Development Engineer
Texas Instruments, Dallas, Texas, United States, 75215
Wide Bandgap Process Development Engineer
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Job Description TI is seeking an innovative and highly skilled device physics and process engineer to join our cutting‑edge central research group in Kilby Labs. This role offers the unique opportunity to work at the forefront of developing new process technology in wide‑bandgap and other materials to redefine the power electronics landscape. You will be instrumental in developing and scaling power process technologies, including GaN epitaxial development and innovations. You’ll collaborate across disciplines to deliver state‑of‑the‑art devices with world‑class performance and reliability.
About The Job The position focuses on leading the development, characterization and optimization of gallium nitride (GaN) power devices. It involves close collaboration with fab/manufacturing, business units and the Advanced Technology Development (ATD) group. The scope of the job includes, but is not limited to:
GaN device simulations (TCAD), device design, layout and lead tape‑outs
Novel epitaxial development: contributing innovative ideas for unlocking and enabling future wide‑bandgap capabilities and driving EPI reactors for experiments to validate ideas
Develop robust process flows, drive design‑of‑experiment (DOE) execution, and solve complex integration challenges
Collaboration with fab/manufacturing engineers to ensure device manufacturability
Collaboration with reliability engineers to meet device reliability requirements
Failure root‑cause investigation for device/process/reliability/yield improvement
Ideal candidate is expected to have a strong understanding of the following:
Power FETs and other relevant semiconductor device physics
Innovative and creative background on epitaxial development
Typical analog silicon and GaN HEMT process flows and underlying physics
Electrical and materials characterization methodologies and statistical data analysis
Strong hands‑on lab experience and excellent problem‑solving skills
Excellent verbal and written communication skills as the position requires interfacing with multiple teams
Qualifications Minimum requirements
Master’s in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
10+ years of hands‑on experience in GaN or compound semiconductor device/process development (including postdoc or industry experience)
Strong knowledge of semiconductor processing, especially in III‑V materials
Experience with process integration, DOE planning, electrical characterization, and failure analysis
Proven ability to work across functional teams and drive results in a fast‑paced R&D environment
Preferred Qualifications
Ph.D. in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
10+ years of experience in GaN‑based electronic device development
Proven experience developing novel epitaxial flows for GaN with hands‑on epi‑reactor experience
Familiarity with GaN‑on‑Si technology for power switching applications
Experience with fab tools and process modules/integration
Strong communication and data analysis skills
Knowledge of device physics, reliability mechanisms, and packaging interaction is a plus
Ability to work in teams and collaborate effectively with people in different functions
Ability to take the initiative and drive for results
Sound decision‑making capabilities and the ability to prioritize tasks and adapt accordingly
Why TI?
Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.
We’re different by design. Diverse backgrounds and perspectives push innovation forward and make TI stronger. We value each and every voice, and look forward to hearing yours.
Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well‑being is important to us.
About Texas Instruments Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. We are passionate about creating a better world by making electronics more affordable and reliable.
Texas Instruments is an equal‑opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.
If you are interested in this position, please apply to this requisition.
Referrals Referrals increase your chances of interviewing at Texas Instruments by 2x.
Seniority Level Mid‑Senior level
Employment Type Full‑time
Job Function Engineering and Information Technology
Industries Semiconductor Manufacturing
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Job Description TI is seeking an innovative and highly skilled device physics and process engineer to join our cutting‑edge central research group in Kilby Labs. This role offers the unique opportunity to work at the forefront of developing new process technology in wide‑bandgap and other materials to redefine the power electronics landscape. You will be instrumental in developing and scaling power process technologies, including GaN epitaxial development and innovations. You’ll collaborate across disciplines to deliver state‑of‑the‑art devices with world‑class performance and reliability.
About The Job The position focuses on leading the development, characterization and optimization of gallium nitride (GaN) power devices. It involves close collaboration with fab/manufacturing, business units and the Advanced Technology Development (ATD) group. The scope of the job includes, but is not limited to:
GaN device simulations (TCAD), device design, layout and lead tape‑outs
Novel epitaxial development: contributing innovative ideas for unlocking and enabling future wide‑bandgap capabilities and driving EPI reactors for experiments to validate ideas
Develop robust process flows, drive design‑of‑experiment (DOE) execution, and solve complex integration challenges
Collaboration with fab/manufacturing engineers to ensure device manufacturability
Collaboration with reliability engineers to meet device reliability requirements
Failure root‑cause investigation for device/process/reliability/yield improvement
Ideal candidate is expected to have a strong understanding of the following:
Power FETs and other relevant semiconductor device physics
Innovative and creative background on epitaxial development
Typical analog silicon and GaN HEMT process flows and underlying physics
Electrical and materials characterization methodologies and statistical data analysis
Strong hands‑on lab experience and excellent problem‑solving skills
Excellent verbal and written communication skills as the position requires interfacing with multiple teams
Qualifications Minimum requirements
Master’s in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
10+ years of hands‑on experience in GaN or compound semiconductor device/process development (including postdoc or industry experience)
Strong knowledge of semiconductor processing, especially in III‑V materials
Experience with process integration, DOE planning, electrical characterization, and failure analysis
Proven ability to work across functional teams and drive results in a fast‑paced R&D environment
Preferred Qualifications
Ph.D. in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
10+ years of experience in GaN‑based electronic device development
Proven experience developing novel epitaxial flows for GaN with hands‑on epi‑reactor experience
Familiarity with GaN‑on‑Si technology for power switching applications
Experience with fab tools and process modules/integration
Strong communication and data analysis skills
Knowledge of device physics, reliability mechanisms, and packaging interaction is a plus
Ability to work in teams and collaborate effectively with people in different functions
Ability to take the initiative and drive for results
Sound decision‑making capabilities and the ability to prioritize tasks and adapt accordingly
Why TI?
Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.
We’re different by design. Diverse backgrounds and perspectives push innovation forward and make TI stronger. We value each and every voice, and look forward to hearing yours.
Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well‑being is important to us.
About Texas Instruments Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. We are passionate about creating a better world by making electronics more affordable and reliable.
Texas Instruments is an equal‑opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.
If you are interested in this position, please apply to this requisition.
Referrals Referrals increase your chances of interviewing at Texas Instruments by 2x.
Seniority Level Mid‑Senior level
Employment Type Full‑time
Job Function Engineering and Information Technology
Industries Semiconductor Manufacturing
#J-18808-Ljbffr