GaN Power Device Process Engineer - Epitaxy & DOE Lead

A global semiconductor company is seeking a Wide Bandgap Process Development Engineer to develop GaN power devices. This position requires 10+ years of hands-on experience in semiconductor device development, focusing on innovative epitaxial techniques. The role involves collaboration with multiple teams to ensure manufacturability and reliability. The ideal candidate has a strong background in electrical engineering and excellent problem-solving skills. This role offers a competitive salary and the opportunity to shape future technologies in electronics. #J-18808-Ljbffr